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| FD6M033N06 60V/73A Synchronous Rectifier Module March 2008 FD6M033N06 60V/73A Synchronous Rectifier Module General Features * Very High Rectification Efficiency at Output 12V * Integrated Solution for Saving Board Space * RoHS Compliant Power-SPMTM tm General Description The FD6M033N06 is one product in the Power-SPMTM family that Fairchild has newly developed and designed to be most suitable for more compact and more efficient synchronous rectification applications such as internet server power supplies and telecom system power supplies. For higher efficiency, it includes built-in very low RDS(ON) MOSFETs. This Power-SPM device can be used in the secondary side of the PWM transformer of forward/bridge converter to provide high current rectification at output voltages ranging from 12 Volts down to 5 Volts. With this product, it is possible to design the secondary side of power supply systems with reduced parasitic elements resulting in minimized voltage spike and EMI noise. MOSFET Features * VDSS = 60V * QG(TOTAL) = 99nC(Typ.), VGS = 10V * RDS(ON) = 2.6m(Typ.), VGS = 10V, ID = 40A * Low Miller Charge * Low Qrr Body Diode * UIS Capability (Single Pulse and Repetitive Pulse) * Fully Isolated Package Applications * High Current Isolated Converter * Distributed Power Architectures * Synchronous Rectification * DC/DC Converter * Battery Supplied Application * ORing MOSFET 1 15 EPM15 Package Block Diagram 10 G2 D2 9 15 8 Q2 G1 14 13 S2 6 12 7 Q1 11 D1 S1 1 2 3 4 5 Figure 1. FD6M033N06 Module Block Diagram (c)2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FD6M033N06 Rev. A FD6M033N06 60V/73A Synchronous Rectifier Module Pin Configuration and Pin Description Top View D1 S1 G1 NC NC NC G2 S2 D2 Figure 2. Pinmap of FD6M033N06 Pin Number 1 2~5 6 7 8 9 10 11 ~ 14 15 Pin Name D1 S1 G1 NC NC NC G2 S2 D2 Pin Description Drain of Q1, MOSFET Source of Q1, MOSFET Gate of Q1, MOSFET No Connection No Connection No Connection Gate of Q2, MOSFET Source of Q2, MOSFET Drain of Q2, MOSFET Absolute Maximum Ratings TC = 25C, Symbol VDS VGS ID EAS TJ, TSTG Drain to Source Voltage Gate to Source Voltage Unless Otherwise Specified Rating (Note1) Parameter Unit V V A mJ C 60 20 Drain Current, Continuous (VGS = 10V) Single Pulse Avalanche Energy Operating and Storage Temperature Range (Note1) (Note1,2) 73 924 -40 ~ 150 Thermal Resistance Symbol RJC Note: 1. Each MOSFET Switch 2. Starting TJ = 25C, VD = 40V, L = 0.2mH, IAS = 55.5A Parameter Junction to Case Thermal Resistance (Note1) Min. - Typ. - Max. 3.9 Unit C/W FD6M033N06 Rev. A 2 www.fairchildsemi.com FD6M033N06 60V/73A Synchronous Rectifier Module Electrical Characteristics TC = 25C, Unless Otherwise Specified Symbol Parameter Test Conditions Min. Typ. Max. Units Synchronous Rectifier Switch Part (Each Switch) BVDSS IDSS IGSS VGS(TH) RDS(ON) Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Gate Threshold Voltage Drain to Source On Resistance ID= 250A, VGS = 0V VGS = 0V, VDS = 48V VGS = 20V VD = 20V, IDS = 250A ID = 40A, VGS = 10V TJ = 150C 60 2.0 - 2.6 4.88 1 100 4.0 3.3 - V A nA V m Dynamic Charateristics CISS COSS CRSS Qg(TOT) Qg(TH) Qgs Qgs2 Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain "MIller" Charge VGS = 0V to 10V VGS = 0V to 2V VDD = 40V ID = 40A Ig = 1.0mA VDS = 25V, VGS = 0V, f = 1MHz 6010 1145 365 99 11 27 16 28 129 14 pF pF pF nC nC nC nC nC Switching Charateristics (VGS = 10V) tON td(on) tr td(off) tf tOFF Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time ID = 40A VGS = 10V, VDD = 40V, RG = 5 23 27 52 33 90 135 ns ns ns ns ns ns Drain-Source Diode Charateristics VSD trr Qrr Source to Drain Diode Voltage ISD = 80A, VGS = 0V ISD = 40A, VGS = 0V Reverse Recovery Time Reverse Recovery Charge ISD = 40A, dISD/dt = 100A/s ISD = 40A, dISD/dt = 100A/s 36 38 1.25 1.0 V ns nC FD6M033N06 Rev. A 3 www.fairchildsemi.com FD6M033N06 60V/73A Synchronous Rectifier Module Typical Performance Characteristics Each Switch, Unless Otherwise Specified Figure 3. On-Region Characteristics 120 VGS 10.0 V 7.0 V 6.0 V Bottom : 5.0 V Top : ID VDS ID, Drain Current[A] 80 D VGS G 40 *Notes : 1. 250s Pulse Test o 2. TC = 25 C VDS VGS,STEP FD6M033N06 S 1.5 0 0.0 0.5 1.0 VDS, Drain-Source Voltage[V] Figure 4. Transfer Characteristics 160 ID VDS ID, Drain Current[A] D VGS 120 150 C o 80 G VGS 25 C -40 C o o VDS 40 FD6M033N06 S 0 3.0 3.5 4.0 4.5 *Notes : 1. VDS = 15V 2. 250s Pulse Test 5.0 5.5 6.0 VGS, Input Voltage[V] Figure 5. Body Diode Forward Voltage Variation vs. Source Current and Temperature 100 IS, Reverse Drain Current [A] Figure 6. Output Capacitance Characteristic 10 8 Capacitance [nF] Ciss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd C iss 150 C o 25 C o 10 4 Coss * Notes : 1. VGS = 0 V 2. f = 1 MHz *Notes : 1. VGS = 0V 2. 250s Pulse Test Crss 1 0.4 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V] 0 0.1 1 10 60 VDS, Drain-Source Voltage [V] FD6M033N06 Rev. A 4 www.fairchildsemi.com FD6M033N06 60V/73A Synchronous Rectifier Module Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.20 RDS(ON), (Normalized) Drain-Source On-Resistance * Notes: 1. VGS = 0V 2. ID = 250A Figure 8. On-Resistance Variation vs. Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 0 50 100 150 TJ, Junction Temperature [C] 200 * Notes : 1. VGS = 10 V 2. ID = 40 A 1.10 1.00 0.90 0.85 -50 0 50 100 150 200 TJ, Junction Temperature [C] Figure 9. Transient Thermal Response Curve 10 Thermal Response [ZJC] 0.5 1 0.2 0.1 0.05 0.1 PDM t1 t2 0.02 0.01 *Notes: 0.01 Single pulse 1. ZJC(t) = 3.9 C/W Typ. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) -4 o 0.001 -5 10 10 10 -3 10 -2 10 -1 10 0 10 1 10 2 Rectangular Pulse Duration [sec] Figure 10. Maximum Safe Operating Area 300 100 ID, Drain Current [A] 1ms 10ms DC 100s Figure 11. Unclamped Inductive Switching Capability 400 If R = 0 tAV = (L)(IAS)/(1.3*Rated BVDSS - VDD) If R ? 0 tAV = (L/R)ln[(IAS*R)/(1.3*Rated BVDSS - VDD) + 1] 10 Operation in This Area is Limited by R DS(on) IAS, Avalanche Current [A] 100 Starting TJ = 25 C o 10 Starting TJ = 125 C o 1 * Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o 0.1 0.1 1 10 VDS, Drain-Source Voltage [V] 100 1 0.01 0.1 1 10 100 1000 tAV, Time In Avalanche [ms] FD6M033N06 Rev. A 5 www.fairchildsemi.com FD6M033N06 60V/73A Synchronous Rectifier Module AC Test Circuits and Waveforms IAS VDS L tp IAS VDS D VGS VDD VGS G VDD tp S FD6M033N06 0 tAV Figure 12. Unclamped Inductive Switching Test Circuit and Waveforms VDS D VGS RL R Figure 13. G Switching Test Waveforms DD V G PULSE FD6M033N06 S Figure 13. Switching Test Circuit tON td(ON) tr 90% tOFF td(OFF) tf 90% VDS 10% 10% 90% VGS 10% 50% 50% PULSE WIDTH Figure 14. Switching Test Waveforms FD6M033N06 Rev. A 6 www.fairchildsemi.com FD6M033N06 60V/73A Synchronous Rectifier Module Application circuits VIN 10 G2 VOUT 9 15 D2 8 Q2 6 G1 14 13 S2 7 PWM Controller D1 12 Q1 S1 11 2 3 4 5 1 OPTO Feedback Figure 15. Application Circuit of Forward Converter with FD6M033N06 LF VOUT VIN G2 10 9 15 D2 CF Q1 8 Q2 CR 6 G1 14 13 S2 VOUT_FB FOD817 7 Q1 12 KA431 Q2 1 11 S1 D1 2 3 4 5 LF Figure 16. Application Circuit of Asymmetrical HB Converter with FD6M033N06 VIN Q1 Q3 G2 LF VOUT 10 9 15 D2 CF 8 Q2 6 G1 14 13 S2 VOUT_FB FOD817 7 Q1 D1 S1 12 KA431 Q2 Q4 1 11 2 3 4 5 LF Figure 17. Application Circuit of Full Bridge Converter with FD6M033N06 FD6M033N06 Rev. A 7 www.fairchildsemi.com FD6M033N06 60V/73A Synchronous Rectifier Module Detailed Package Outline Drawings 26.20 25.80 23.10 22.90 2.70 2.30 (0.50) (R0.50) 5.35 5.15 10.70 10.30 (12.00) (1.50) (R0.55) (0.77) (R0.55) 0.70 0.30 (6.00) 18.50 17.50 14.50 13.50 MAX 3.07 2.97 2.77 1.27 MAX 0.80 0.70 0.50 0.60 0.40 3.48 2.88 22.86 (R0.50) 2.70 2.30 Figure 18. EPM15 Package Dimensions in Millimeters FD6M033N06 Rev. A 8 www.fairchildsemi.com TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * FPSTM F-PFSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) PDP SPMTM Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM Saving our world, 1mW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SupreMOSTM SyncFETTM (R) The Power Franchise(R) TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Preliminary First Production No Identification Needed Obsolete Full Production Not In Production (c) 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com |
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